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| ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.230 DESCRIPTION ID = 1.9A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23-6 package SOT23-6 APPLICATIONS * DC - DC Converters * Power Management Functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMN10B08E6TA ZXMN10B08E6TC REEL SIZE 7" 13" TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units PINOUT DEVICE MARKING * 10B8 Top View ISSUE 1 - OCTOBER 2005 1 SEMICONDUCTORS ZXMN10B08E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V; T A =25C (b) V GS =10V; T A =70C (b) V GS =10V; T A =25C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 100 20 1.9 1.5 1.6 9 2.5 9 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 73 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph ISSUE 1 - OCTOBER 2005 SEMICONDUCTORS 2 ZXMN10B08E6 CHARACTERISTICS ISSUE 1 - OCTOBER 2005 3 SEMICONDUCTORS ZXMN10B08E6 ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V (BR)DSS I DSS 1.0 100 0.5 100 3.0 0.230 0.300 0.500 4.8 S V A nA V I D =250 A, V GS =0V V DS =100V, V GS =0V V GS = 20V, V DS =0V I =250 A, V DS = V GS D V GS =10V, I D =1.6A V GS =4.5V, I D =1.4A V GS =4.3V, I D =1.1A V DS =15V,I D =1.6A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Gate-Source Threshold Voltage I GSS V GS(th) Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time t d(on) tr t d(off) tf Qg Qg Q gs Q gd V SD t rr Q rr C iss C oss C rss g fs 497 29 18 pF pF pF V DS =50 V, V GS =0V, f=1MHz 2.9 2.1 12.1 5.0 5.0 9.2 1.7 2.5 ns ns ns ns nC nC nC nC V DS =50V,V GS =10V, I D =1.6A V DS =50V,V GS =5V, I D =1.6A V DD =50V, I D =1.0A R G 6.0 , V GS =10V Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) 0.85 32.0 40.0 0.95 V ns nC T J =25C, I S =2.0A, V GS =0V T J =25C, I F =1.7A, di/dt= 100A/ s NOTES (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 SEMICONDUCTORS 4 ZXMN10B08E6 TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 5 SEMICONDUCTORS ZXMN10B08E6 TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 SEMICONDUCTORS 6 ZXMN10B08E6 PACKAGE OUTLINE PAD LAYOUT DETAILS b e L2 E E1 e1 D a DATUM A C A A2 A1 CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimetres DIM Min A A1 A2 b C D 0.90 0.00 0.90 0.35 0.09 2.80 Max 1.45 0.15 1.30 0.50 0.20 3.00 Min 0.35 0 0.035 0.014 0.0035 0.110 Max 0.057 0.006 0.051 0.019 0.008 0.118 E E1 L e e1 L Inches DIM Min 2.60 1.50 0.10 Max 3.00 1.75 0.60 Min 0.102 0.059 0.004 Max 0.118 0.069 0.002 Millimetres Inches 0.95 REF 1.90 REF 0 10 0.037 REF 0.074 REF 0 10 (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - OCTOBER 2005 7 SEMICONDUCTORS |
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